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| 1T405 Variable Capacitance Diode For the availability of this product, please contact the sales office. Description The 1T405 is a variable capacitance diode designed for electronic tuning of wide-band CATV tuners using a super-small-miniature flat package (SSVC). Features * Super-small-miniature flat package * Low series resistance: 0.85 Max. (f=470 MHz) * Large capacitance ratio: 12.5 Typ. (C2/C25) * Small leakage current: 10 nA Max. (VR=28 V) * Capacitance deviation in a matching group: within 2% Applications Electronic tuning of UHF and wide-band CATV tuners Structure Silicon epitaxial planar type diode M-290 Absolute Maximum Ratings (Ta=25 C) * Reverse voltage VR 34 * Operating temperature Topr -20 to +75 * Storage temperature Tstg -65 to +150 V C C Electrical Characteristics Item Reverse current Reverse voltage Diode capacitance Capacitance ratio Series resistance Capacitance deviation in a matching group Symbol IR VR C2 C25 C2/C25 rs C Conditions VR=28 V IR=1 A VR=2 V, f=1 MHz VR=25 V, f=1 MHz CD=14 pF, f=470 MHz VR=2 to 25 V, f=1 MHz Min. Typ. Max. 10 34 32.96 2.53 12.0 38.96 2.96 12.5 0.85 2 (Ta=25 C) Unit nA V pF pF % Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. --1-- E95918-TE 1T405 Diode capacitance vs. Reverse voltage 100 Ta=25C 50 100 Reverse current vs. Ambient temperature VR=28V C-Diode capacitance (pF) 10 5 IR-Reverse current (pA) 1 2 5 10 20 VR-Reverse voltage (V) 50 20 10 2 1 1 -20 0 20 40 60 Ta-Ambient temperature (C) 80 Forward voltage vs. Ambient temperature 0.80 45 IF=1mA Reverse voltage vs. Ambient temperature VR-Reverse voltage (V) VF-Forward voltage (V) IR=10A 40 0.70 0.60 35 0.50 -20 0 20 40 60 Ta-Ambient temperature (C) 80 30 -20 0 20 40 60 Ta-Ambient temperature (C) 80 --2-- 1T405 Diode capacitance vs. Ambient temperature 1.03 VR=1V C (Ta)/C (25C)-Diode capacitance 1.02 VR=2V 1.01 VR=7V VR=25V VR=15V 1.00 0.99 0.98 -20 0 20 40 60 Ta-Ambient temperature (C) 80 Reverse current vs. Reverse voltage 100 Ta=80C 1000 Temperature coefficient of diode capacitance Temperature coefficient (ppm/C) 500 Ta=60C IR-Reverse current (pA) 10 200 100 Ta=25C 1 50 1 2 5 10 VR-Reverse voltage (V) 20 50 0.1 1 3 10 30 VR-Reverse voltage (V) --3-- 1T405 Package Outline Unit : mm M-290 1.3 0.1 A 1.7 0.1 0.8 0.1 0.2 M A 10 MAX b c 10 MAX 0.7 0.1 BASE METAL WITH PLATING c b 0.11 0.005 0.3 0.025 + 0.11 - 0.05 0.01 + 0.05 0.3 - 0.02 PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE M-290 LEAD TREATMENT LEAD MATERIAL PACKAGE WEIGHT EPOXY RESIN SOLDER PLATING COPPER 0.002g Mark 1 S5 1 : Cathode 2 2 : Anode --4-- 0.2 0.05 |
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